Methods and devices for healing reset errors in a magnetic memory

ABSTRACT

A method is provided for healing reset errors for a magnetic memory using destructive read with selective write-back, including for example, a self-referenced read of spin-torque bits in an MRAM. Memory cells are prepared for write back by one of identifying memory cells determined in error using an error correcting code and inverting the inversion bit for those memory cells determined in error; identifying memory cells determined in error using an error correcting code and resetting a portion of the memory cells to the first state; and resetting one or more memory cells to the first state.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application No.61/833,990 filed 12 Jun. 2013.

TECHNICAL FIELD

The exemplary embodiments described herein generally relate to magneticmemories using destructive read with selective write-back, and moreparticularly relate to methods for healing reset errors in amagnetoresistive random access memory (MRAM) having a spin-torque resetfor a self-referenced read process.

BACKGROUND

Magnetoelectronic devices, spin electronic devices, and spintronicdevices are synonymous terms for devices that make use of effectspredominantly caused by electron spin. Magnetoelectronics are used innumerous information devices to provide non-volatile, reliable,radiation resistant, and high-density data storage and retrieval. Thenumerous magnetoelectronics information devices include, but are notlimited to, Magnetoresistive Random Access Memory (MRAM), magneticsensors, and read/write heads for disk drives.

Typically an MRAM includes an array of magnetoresistive memory elements.Each magnetoresistive memory element typically has a structure thatincludes multiple magnetic layers separated by various non-magneticlayers, such as a magnetic tunnel junction (MTJ), and exhibits anelectrical resistance that depends on the magnetic state of the device.Information is stored as directions of magnetization vectors in themagnetic layers. Magnetization vectors in one magnetic layer aremagnetically fixed or pinned, while the magnetization direction ofanother magnetic layer may be free to switch between the same andopposite directions that are called “parallel” and “antiparallel”states, respectively. Corresponding to the parallel and antiparallelmagnetic states, the magnetic memory element has low (logic “0” state)and high (logic “1” state) electrical resistance states, respectively.Accordingly, a detection of the resistance allows a magnetoresistivememory element, such as an MTJ device, to provide information stored inthe magnetic memory element. There are two completely different methodsused to program the free layer: field switching and spin-torqueswitching. In field-switched MRAM, current carrying lines adjacent tothe MTJ bit are used to generate magnetic fields that act on the freelayer. In spin-torque MRAM, switching is accomplished with a currentpulse through the MTJ itself. The angular momentum carried by thespin-polarized tunneling current causes reversal of the free layer, withthe final state (parallel or antiparallel) determined by the polarity ofthe current pulse. A reset current pulse will cause the final state tobe parallel or logic “0”. A set current pulse, in the opposite polarityof reset current pulse, will cause the final state to be antiparallel orlogic “1”. Spin-torque transfer is known to occur in MTJ devices andgiant magnetoresistance devices that are patterned or otherwise arrangedso that the current flows substantially perpendicular to the interfaces,and in simple wire-like structures when the current flows substantiallyperpendicular to a domain wall. Any such structure that exhibitsmagnetoresistance has the potential to be a spin-torque magnetoresistivememory element.

Spin-torque MRAM is an emerging memory technology with the potential fornon-volatility with unlimited endurance and fast write speeds at muchhigher density than field-switched MRAM.

Data stored in memory is defined in pages within banks. A rank is aplurality of banks in a first direction (column) and a channel is aplurality of banks in a second direction (row). A process for accessinga page in the memory comprises several clock cycles required for bank,row, and column address identification as well as the transfer of dataassociated with a read or write operation. A high bandwidth datatransfer may comprise accessing many thousands of bits of dataassociated with a range of address space across a page in one or morebanks, ranks, or channels.

Access to a page within a bank in a memory generally includes anACTIVATE operation, followed by several READ/WRITE operations and aPRECHARGE operation. The ACTIVATE operation opens a page associated witha specified row and bank address, thereby reading from an array ofmemory the state of each of the cells within the page, typically 1,000or more bits of data. The READ/WRITE operation performs the transfer ofdata (reading or writing) associated with specified column addresses,e.g., 128 bits, in the open page. The PRECHARGE operation closes thepage, thereby assuring that the final state of each of the cells withinthe page after the performed operations is stored in the array of memoryand that the bank is ready to receive a subsequent ACTIVATE command.

During the ACTIVATE operation, a page of data is read from the memoryarray and stored in local data-store latches for subsequent READ andWRITE operations from and to the local data-store latches. The ACTIVATEoperation can be initiated by an ACTIVATE command or any other commandthat performs the same operation. During a PRECHARGE operation, the datafrom local data-store latches are written back to the memory array, andas a result, that page is considered closed or not accessible without anew ACTIVATE operation. The PRECHARGE operation can be initiated by aPRECHARGE or AUTO-PRECHARGE command or any other command that performsthe same operation. During the PRECHARGE operation in ST-MRAM, currentpulses to write the MTJs corresponding to the open page would be appliedto write-back the data from the local data-store latches to ST-MRAMarray.

In an MRAM implementation using a reset operation during an ACTIVATEoperation, such as designs with spin-torque reset for self-referencedread, all the bits in a page or word are reset to a predetermined state,for example, “low,” with a reset write current as part of theself-referenced read operation within the ACTIVATE operation. When thepage is closed during the PRECHARGE operation, the bits with a finalstate indicating that they need to have their state changed are set“high” with a set write current. If error correcting code (ECC) isapplied to the data that is read from the bits during theself-referenced read operation, corrected data can be used indetermining the final state, and thereby which bits are selectively setduring the PRECHARGE operation, reducing or eliminating the accumulationof errors over several ACTIVATE/PRECHARGE cycles. However, a bit thatdoes not reset during the self-referenced read operation will be left inthe “high” state, and, since the failing bit did not change state, theresult of a self-referenced read operation will incorrectly read thefailing bit as being in the “low” state. If the final data state is a“low” for that bit, the circuit will not apply a set write pulse to itduring the PRECHARGE operation, leaving an error written to that word.Restated, a reset error will not always be healed by ECC. Such an errorwould combine with other sources, such write-back errors and hard fails,increasing the chance of having more than the correctable number of badbits per ECC word, e.g., more than one bad bit per single-bit correctionECC word.

Accordingly, it is desirable to provide a method for healing reseterrors for a self-referenced read of spin-torque bits in an MRAM.Furthermore, other desirable features and characteristics of theexemplary embodiments will become apparent from the subsequent detaileddescription and the appended claims, taken in conjunction with theaccompanying drawings and the foregoing technical field and background.

BRIEF SUMMARY

A method and apparatus are provided for healing reset errors for aself-referenced read of spin-torque bits in an MRAM.

A first exemplary embodiment is a method of healing reset errors in aplurality of memory cells in a memory array, the method comprisingperforming a self-referenced read to identify one of a first state or asecond state associated with each of the memory cells includingresetting each of the memory cells to the first state; identifying by anerror correcting code an error in at least one memory cell; performingan action on one or more memory cells, the action consisting of one ofthe group selected from selectively setting an inversion memory cell tothe second state, determined at least in part by the result of the errorcorrection operation; and resetting at least a portion of the memorycells to the first state; and selectively setting to the second stateeach of the respective memory cells determined to be associatedtherewith.

A second exemplary embodiment is a method of healing reset errors in aplurality of memory cells in a memory array, the method comprisingperforming a self-referenced read to identify one of a first state or asecond state associated with each of the memory cells includingresetting each of the memory cells to the first state; resetting atleast a portion of the memory cells to the first state; and selectivelysetting to the second state each of the memory cells determined to beassociated therewith.

A third exemplary embodiment is a memory device comprising a pluralityof memory cells; and circuitry coupled to the memory cells andconfigured to perform a self-referenced read to identify one of a firststate or a second state associated with each of the memory cellsincluding resetting each of the memory cells to the first state; andperform an action to correct reset errors on one or more memory cells,the action consisting of one of the group selected from selectively setan inversion memory cell to the second state, determined at least inpart by the result of an error correction operation; and reset at leasta portion of the memory cells to the first state; and set to the secondstate each of the memory cells determined to be associated therewith.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will hereinafter be described in conjunction withthe following drawing figures, wherein like numerals denote likeelements, and

FIG. 1 is a block diagram of a memory interconnection system that may beused to apply the methods in accordance with the exemplary embodiments;

FIG. 2 is a partial schematic diagram of a ST-MRAM bank;

FIG. 3 is a flow chart of known steps for reading, resetting, andwriting bits;

FIG. 4 is a known organization of words in a row/page of a bank ofnon-volatile memory;

FIG. 5 is a flow chart of the steps for reading a self-referencing senseamplifier in accordance with an exemplary embodiment; and

FIG. 6 is a flow chart of the steps for reading a self-referencing senseamplifier in accordance with another exemplary embodiment.

DETAILED DESCRIPTION

The following detailed description is merely illustrative in nature andis not intended to limit the embodiments of the subject matter or theapplication and uses of such embodiments. Any implementation describedherein as exemplary is not necessarily to be construed as preferred oradvantageous over other implementations. Furthermore, there is nointention to be bound by any expressed or implied theory presented inthe preceding technical field, background, brief summary, or thefollowing detailed description.

For simplicity and clarity of illustration, the drawing figures depictthe general structure and/or manner of construction of the variousembodiments. Descriptions and details of well-known features andtechniques may be omitted to avoid unnecessarily obscuring otherfeatures. Elements in the drawings figures are not necessarily drawn toscale: the dimensions of some features may be exaggerated relative toother elements to assist improve understanding of the exampleembodiments.

Terms of enumeration such as “first,” “second,” “third,” and the likemay be used for distinguishing between similar elements and notnecessarily for describing a particular spatial or chronological order.These terms, so used, are interchangeable under appropriatecircumstances. The embodiments of the invention described herein are,for example, capable of use in sequences other than those illustrated orotherwise described herein.

The terms “comprise,” “include,” “have” and any variations thereof areused synonymously to denote non-exclusive inclusion. The term“exemplary” is used in the sense of “example,” rather than “ideal.”

In the interest of conciseness, conventional techniques, structures, andprinciples known by those skilled in the art may not be describedherein, including, for example, standard magnetic random access memory(MRAM) process techniques, fundamental principles of magnetism, andbasic operational principles of memory devices.

During the course of this description, like numbers may be used toidentify like elements according to the different figures thatillustrate the various exemplary embodiments.

Techniques and technologies may be described herein in terms offunctional and/or logical block components, and with reference tosymbolic representations of operations, processing tasks, and functionsthat may be performed by various computing components or devices. Suchoperations, tasks, and functions are sometimes referred to as beingcomputer-executed, computerized, software-implemented, orcomputer-implemented. In practice, one or more processor devices cancarry out the described operations, tasks, and functions by manipulatingelectrical signals representing data bits at memory locations in thesystem memory, as well as other processing of signals. The memorylocations where data bits are maintained are physical locations thathave particular electrical, magnetic, optical, resistive, or organicproperties corresponding to the data bits. It should be appreciated thatthe various clock, signal, logic, and functional components shown in thefigures may be realized by any number of hardware, software, and/orfirmware components configured to perform the specified functions. Forexample, an embodiment of a system or a component may employ variousintegrated circuit components, e.g., memory elements, digital signalprocessing elements, logic elements, look-up tables, or the like, whichmay carry out a variety of functions under the control of one or moremicroprocessors or other control devices.

The exemplary embodiments described herein perform an operation afterthe read is complete and before the write-back, which reduces the biterror rate of MRAM devices using a reset operation, especially forspin-torque reset since selected bits may be reset. The embodiments mayallow for the use of shorter reset pulses, or lower power reset pulses,since the memory will be able to tolerate a higher reset error rate. Ingeneral, in a first exemplary embodiment, if an error bit detected byerror correcting code (ECC) in the data in an ECC word was read as “low”and the final data to be written back is “low” for that bit, invert thedata in that word or page by setting an inversion bit(s), thus makingthe data associated with that bit to be stored in the array “high”. Asecond exemplary embodiment uses ECC information to identify an errorcondition and then performs a second reset operation on the ECC word orpage containing the cell(s) determined in error. A third exemplaryembodiment uses ECC information to identify an error condition and thenperforms a second reset operation only on the bits that theself-referenced read determined to be “low”. A fourth exemplaryembodiment uses ECC information to identify an error condition and thenperforms a second reset operation on all bits determined to be errorsand that were corrected by ECC. A fifth exemplary embodiment uses ECCinformation to identify an error condition and then performs a secondreset operation on all bits determined to be errors that were correctedby ECC and that the self-referenced read determined to be “low”. A sixthexemplary embodiment, which may be applied to field-reset memory as wellas spin-torque reset memory, performs a second reset operation for allbits in the page sometime during the cycle after read and beforewrite-back. A seventh exemplary embodiment identifies memory cells thatthe self-referenced read determined to be “low” and performs a secondreset operation on the memory cells that the self-referenced readdetermined to be “low”.

The particular embodiments disclosed above are illustrative only andshould not be taken as limitations upon the present invention, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. Accordingly, the foregoing description is not intendedto limit the invention to the particular form set forth, but on thecontrary, is intended to cover such alternatives, modifications andequivalents as may be included within the spirit and scope of theinvention as defined by the appended claims so that those skilled in theart should understand that they can make various changes, substitutionsand alterations without departing from the spirit and scope of theinvention in its broadest form.

Furthermore, it should be noted that, while the current invention isdescribed in the context of magnetoresistive memories, it could also beapplied to other types of memories using a destructive read withselective write-back such as, but not limited to, charge based memories,resistive RAMs, phase change RAMs, etc.

For the sake of brevity, conventional techniques related to reading andprogramming memory, and other functional aspects of certain systems andsubsystems (and the individual operating components thereof) may not bedescribed in detail herein. Furthermore, the connecting lines shown inthe various figures contained herein are intended to represent exemplaryfunctional relationships and/or physical couplings between the variouselements. It should be noted that many alternative or additionalfunctional relationships or physical connections may be present in anembodiment of the subject matter.

A magnetoresistive random access memory (MRAM) array includes writecurrent drivers and sense-amplifiers positioned near a plurality ofmagnetoresistive bits. A write, or program, operation begins when acurrent of either one of the two different and opposite polarities, setor reset, is applied through the magnetic storage element, e.g., MTJ.Such write mechanism is employed in spin torque transfer (STT) or spintorque (ST) MRAM. The spin-torque effect is known to those skilled inthe art. Briefly, a current becomes spin-polarized after the electronspass through the first magnetic layer in amagnetic/non-magnetic/magnetic trilayer structure, where the firstmagnetic layer is substantially more stable than the second magneticlayer. The higher stability of the first layer compared to the secondlayer may be determined by one or more of several factors including: alarger magnetic moment due to thickness or magnetization, coupling to anadjacent antiferromagnetic layer, coupling to another ferromagneticlayer as in a SAF structure, or a high magnetic anisotropy. Thespin-polarized electrons cross the nonmagnetic spacer and then, throughconservation of spin angular momentum, exert a spin torque on the secondmagnetic layer that causes precession of its magnetic moment andswitching to a different stable magnetic state if the current is in theproper direction. When net current of spin-polarized electrons movingfrom the first layer to the second layer exceeds a first criticalcurrent value, the second layer will switch its magnetic orientation tobe parallel to that of the first layer. If a bias of the oppositepolarity is applied, the net flow of electrons from the second layer tothe first layer will switch the magnetic orientation of the second layerto be antiparallel to that of the first layer, provided that themagnitude of the current is above a second critical current value.Switching in this reverse direction involves a fraction of the electronsreflecting from the interface between the spacer and the first magneticlayer and traveling back across the nonmagnetic spacer to interactingwith the second magnetic layer.

Magnetoresistance (MR) is the property of a material to change the valueof its electrical resistance depending on its magnetic state. Typically,for a structure with two ferromagnetic layers separated by a conductiveor tunneling spacer, the resistance is highest when the magnetization ofthe second magnetic layer is antiparallel to that of the first magneticlayer, and lowest when they are parallel.

FIG. 1 is a block diagram of an exemplary memory system 100 includingcircuitry 101 comprising a memory controller 102 that performs datatransfer between a processor 104 and the memory 106. The invention isnot to be limited to this particular type of architecture. The memorycontroller 102 and the processor 104 may reside on the same chip 108, orthey may reside on separate chips (not shown). The memory array 106comprises a non-volatile memory 118 using magnetic tunnel junctions,preferably ST-MRAM, for data storage. The non-volatile memory 118comprises a plurality of non-volatile memory banks 128.

A chip select (CS) line 132 provides a CS signal from the memorycontroller 102 to the non-volatile memory 118. An address bus 137 and adata line 140 couples the memory controller 102 to the non-volatilememory 118. Other control and clock signals may exist between the memorycontroller 102 and non-volatile memory 118 that are not shown in FIG. 1.Furthermore, an address bus 137 and a data line 140 may include multiplelines or bits.

FIG. 2 is a partial schematic diagram of a ST-MRAM bank 128. A ST-MRAMbit cell array 202 is coupled to cache circuitry 204 by write driver206, sense amplifier 208, and ECC and inversion circuitry 210. The writedriver 206 operates in a known manner for writing data to the array 202and the sense amplifier 208 operates in a known manner by reading datafrom the array 202. During a read operation, ECC and inversion circuitry210 may correct and invert read data from sense amplifier 208 andprovide resulting output data to cache circuitry 204. During a writeoperation, ECC and inversion circuitry 210 may correct and invert datafrom cache circuitry 204 and send to write driver 206 for writing to bitcell array 202. The cache circuitry 204 comprises multiple bits and is apart of the data path in a memory array. For simplicity and brevity,other known circuit blocks in a memory, such as a column multiplexer, aword line driver, row and column address decode circuit, that can becoupled between the bit cell array 202 and rest of the circuits in FIG.2, are not shown in FIG. 2.

The ST-MRAM bank 128 includes a plurality of core strips 222, 224 witheach core strip including a plurality of magnetic bit cells 226. Eachmagnetic bit cell 226 includes a magnetic tunnel junction device 228 anda word line select transistor 230. Within each core strip 222, 224 eachmagnetic bit 226 is coupled between a bit line 232 and a first electrodeof a word line select transistor 230, while a second electrode of eachword line select transistor 230 is coupled to a source line 234. Acontrol electrode of each word line select transistor 230 is coupled toa voltage word line 236 (one of the voltage word lines 236 is coupled toa single select transistor (not shown) within each core strip 222, 224).In another embodiment, a portion of cache circuitry 204 and ECC andinversion circuitry 210 may be located inside the core strip 222.

In operation, an ACTIVATE operation for an address can be initiated innon-volatile memory 118. Subsequently, the memory controller 102initiates READ or WRITE operations in the non-volatile memory 118. Thedata from non-volatile memory 118 is read after the non-volatile memoryACTIVATE operation is complete.

The ACTIVATE operation in double data rate (DDR) ST-MRAM performs adestructive read where read data in the memory array is reset to logicstate “0” during the read process. In an MRAM implementation using localcache circuitry, the read data from the memory array is stored in thecache circuitry 204 at the completion of the ACTIVATE operation.READ/WRITE operations subsequent to the ACTIVATE operation are performedto the cache circuitry 204 instead of the ST-MRAM array 106. A smalltime interval, e.g. 5 nanoseconds, between READ/WRITE operations isfeasible due to fast latch operations.

During the ACTIVATE operation, a page of data is read from the memoryarray 106 and stored in cache circuitry 204 for subsequent READ andWRITE operations from and to the cache circuitry 204. The ACTIVATEoperation can be initiated by an ACTIVATE command or any other commandthat performs the same operation. During a PRECHARGE operation, the datafrom local cache circuitry 204 are written back to the memory array 106,and as a result, that page is considered closed or not accessiblewithout a new ACTIVATE operation. The PRECHARGE operation can beinitiated by a PRECHARGE or AUTO-PRECHARGE command or any other commandthat performs the same operation. During the PRECHARGE operation inST-MRAM, current pulses to write the MTJs corresponding to the open pagewould be applied to write-back the data from the local data-storelatches to ST-MRAM array.

In an MRAM implementation using a reset operation, such as designs withspin-torque reset for self-referenced read, wherein all the bits in apage or word in the memory array 106 are reset to a predetermined state,for example, “low,” with a reset write current during a self-referencedread of each memory cell.

FIG. 3 is a flow chart that illustrates an exemplary embodiment of adestructive read operation with an immediate write-back process 300 forrestoring read bits of a ST-MRAM memory back to their state prior to thedestructive read. For illustrative purposes, the following descriptionof process 300 may refer to elements mentioned above in connection withFIG. 1 and FIG. 2. It should be appreciated that process 300 may includeany number of additional or alternative tasks, the tasks shown in FIG. 3need not be performed in the illustrated order, and process 300 may beincorporated into a more comprehensive procedure or process havingadditional functionality not described in detail herein. Moreover, oneor more of the tasks shown in FIG. 3 could be omitted from an embodimentof the process 300 as long as the intended overall functionality remainsintact.

This example of destructive read with immediate write-back in theST-MRAM array includes first sampling 302 a magnetic bit of thenon-volatile memory 118 to provide and store a sampled voltage. Anexemplary sample operation is applying a desired bit voltage across abit; converting the resulting current through the bit into a samplevoltage, and storing the sample voltage into a capacitor. A reset writecurrent pulse is applied 304 to set the bit to 0 (equivalent to a logicstate “0”). The bit state is evaluated 306 by resampling a voltage afterstep 304 is complete and comparing the resampled voltage with thesampled voltage from step 302. An exemplary resample and evaluateoperation is applying the same desired bit voltage from step 302 acrossthe bit; comparing the resulting current through the bit added with anoffset current with the current due to the sample voltage from step 302to generate an evaluation voltage, and comparing the evaluation voltagewith the sample voltage from step 302 to evaluate the bit state. The bitstate is thus determined to be either 0 or 1 depending on the sampledvoltage levels from 302 and 306. For example, if sampled voltage from306 is higher than that from step 302, the bit state is 0. The sampledvoltage levels can be compared in multiple ways to resolve the bitstate. If 308 the bit state is 1, a set write current pulse is applied310 to set the bit to 1, thus performing an immediate write-back torestore the bit state. If 308 the bit state is not 1, no write pulse isneeded 312. While not shown in FIG. 3, an alternate embodiment may applya set write pulse in step 304 and apply a reset write pulse in step 310.

Referring to FIG. 4, a method of organizing a page of bits into multipleerror correcting code (ECC) words, for some of the exemplary embodimentsdescribed herein, includes a plurality of ECC words 402 from 1 to n anda word of inversion status bits 404. Each ECC word 402 comprises aplurality of ECC bits 406 and a plurality of data bits 408. Inaccordance with the present exemplary embodiment, set or reset writecurrent pulses for one ECC word or a group of ECC words can be executed,e.g., initiate, complete, and abort functions, independently at anytime. A write clock phase generator coupled to one ECC word or a groupof ECC words is used for independent execution of write current pulses.Therefore, a page of bits will be coupled to separate clock phasegenerators. When a WRITE operation subsequent to an ACTIVATE operationor any other operation provides data for a portion of the bits in page,the portion of the bits will correspond to either one ECC word ormultiple ECC words.

To minimize power consumption during writes to memory array, a majoritydetection and data state inversion scheme can be employed. According toa majority detection scheme, a majority state of the data or data andECC is determined to be a first or second state. Either one of the firstor second state may consume more power to write to the memory. If themajority state is determined to be the more power consuming state, allthe data bit states or data and ECC bit states may be inverted to theopposite state and written back to the memory. Inversion status bitsindicate if the data or data and ECC in a page are inverted or not.

When the page is closed during PRECHARGE, the bits that need to havetheir state changed are pulsed “high” with a write current. If ECC isapplied to the data that is read from the magnetic bits, and thecorrected data written back, normal write errors do not accumulate inthe cycle. A bit that does not reset during the self-referenced readoperation will be left in the “high” state, and, since the failing bitdid not change state, the result of a self-referenced read operationwill incorrectly read the failing bit as being in the “low” state.Furthermore, if the final data state is a “low” for that bit, thecircuit will not apply a set write pulse to it during the PRECHARGEoperation, leaving an error written to that word. Restated, a reseterror will not always be healed by ECC. Such an error would combine withother sources, such write-back errors and hard fails, increasing thechance of having more than the correctable number of bad bits per ECCword, e.g., more than one bad bit per single-bit correction ECC word.

The healing of reset errors may be accomplished in one of severalexemplary embodiments. Each of the exemplary embodiments describedherein reduces the bit error rate of MRAM devices, and, in a firstembodiment, extra pulses are not added to the read/write cycle to createa negative impact on timing.

A first exemplary embodiment identifies memory cells in error using anerror correcting code and sets the inversion bit(s) for the ECC word orpage containing the cell(s) determined in error. If an error bitdetected by ECC in the data in an ECC word was read as “low” and thefinal data to be written back is “low” for that bit, invert the data inthat word or page by setting an inversion bit(s), thus making the dataassociated with that bit to be stored in the array “high”. Since theerror bit would already be “high” if it was caused by a reset error, itwill no longer be an error after the write-back.

A second exemplary embodiment identifies memory cells in error using anerror correcting code and performs a second reset operation on the ECCword or page containing the cell(s) determined in error. In the casewhere the error was caused by failure to reset a bit to the “low” state,the error might be corrected by the second reset pulse.

In a third exemplary embodiment, memory cells determined in error areidentified using an error correcting code and a second reset operationis performed on bits that the self-referenced read determined to be“low”. In the case where an error bit was read as “low” because the bitdid not change state during the first reset operation, the error mightbe corrected by the second reset pulse.

In a fourth exemplary embodiment, memory cells determined in error areidentified using an error correcting code and a second reset operationis performed on all bits in error.

In a fifth exemplary embodiment, memory cells determined in error areidentified using an error correcting code and a second reset operationis performed on all bits in error that the self-referenced readdetermined to be “low”.

It is preferable to apply the second reset pulse immediately after thedata has been read from the memory cells and stored to the latches sinceit will have less impact on the cycle time. However, in the case wherethe second reset pulse is part of the write-back operation, it ispossible to apply the reset pulse only to the bits in error for whichthe final data to be written back is “low”.

A sixth exemplary embodiment performs a second reset operation for allbits in a page sometime during the cycle after the read and before thewrite-back. All of the bits may be reset, which works for field-resetMRAM as well as spin torque MRAM reset approaches.

A seventh exemplary embodiment identifies memory cells that theself-referenced read determined to be “low” and performs a second resetoperation on the memory cells that the self-referenced read determinedto be “low”.

The second reset pulse can vary in duration, amplitude and shape fromthe first reset pulse. For example, it can be made shorter or have alower amplitude than the first pulse since it is intended to correct alow level of reset errors.

A shorter or lower amplitude second reset pulse is preferable in thecase of the sixth and seventh embodiments to minimize the impact onpower consumption. For the other embodiments, the second reset pulseoccurs only when an error is detected and its impact on powerconsumption should be negligible.

FIGS. 5 and 6 are flow charts that illustrate exemplary embodiments ofmethods 500 and 600, respectively. The various tasks performed inconnection with methods 500 and 600 may be performed by software,hardware, firmware, or any combination thereof. For illustrativepurposes, the following description of methods 500 and 600 may refer toelements mentioned above in connection with other FIGS. In practice,portions of methods 500 and 600 may be performed by different elementsof the described system. It should be appreciated that methods 500 and600 may include any number of additional or alternative tasks, the tasksshown in FIGS. 5 and 6 need not be performed in the illustrated order,and methods 500 and 600 may be incorporated into a more comprehensiveprocedure or process having additional functionality not described indetail herein. Moreover, one or more of the tasks shown in FIGS. 5 and 6could be omitted from an embodiment of the methods 500 and 600 as longas the intended overall functionality remains intact.

The flow chart of FIG. 5 describes a method 500 of healing reset errorsin a plurality of memory cells in a magnetoresistive memory array, themethod comprising performing 502 a self-referenced read to identify oneof a first state or a second state associated with each of the memorycells including resetting each of the memory cells to the first state;identifying 504 by an error correcting code an error in at least onememory cell; performing 506 an action on one or more memory cells, theaction consisting of one of the group selected from selectively settingan inversion memory cell to the second state, determined at least inpart by the result of the error correction operation; and resetting atleast a portion of the memory cells to the first state; and writing 508the state back to each of the respective memory cells.

The flow chart of FIG. 6 describes a method 600 of healing reset errorsin a plurality of memory cells in a magnetoresistive memory array, themethod comprising performing 602 a self-referenced read to identify oneof a first state or a second state associated with each of the memorycells including resetting each of the memory cells to the first state;resetting 604 at least a portion of the memory cells to the first state;and writing 606 the second state associated therewith back to each ofthe memory cells.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any element(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature or element of any or all the claims. As used herein, the terms“comprises,” “comprising,” or any other variation thereof, are intendedto cover a non-exclusive inclusion, such that a process, method,article, or apparatus that comprises a list of elements does not includeonly those elements but may include other elements not expressly listedor inherent to such process, method, article, or apparatus.

While at least one exemplary embodiment has been presented in theforegoing detailed description, it should be appreciated that a vastnumber of variations exist. It should also be appreciated that theexemplary embodiment or exemplary embodiments are only examples, and arenot intended to limit the scope, applicability, or configuration of theinvention in any way. Rather, the foregoing detailed description willprovide those skilled in the art with a convenient road map forimplementing an exemplary embodiment of the invention, it beingunderstood that various changes may be made in the function andarrangement of elements described in an exemplary embodiment withoutdeparting from the scope of the invention as set forth in the appendedclaims.

What is claimed is:
 1. A method of reading from and writing to aplurality of magnetoresistive memory cells, the method comprising:identifying a data storage state of each magnetoresistive memory cell ofthe plurality of magnetoresistive memory cells, wherein eachmagnetoresistive memory cell is configured to store data in one of afirst data storage state or a second data storage state; storing theidentified data storage state of each magnetoresistive memory cell intoa cache; determining, using an error correcting code, whether theidentified data storage state of at least one magnetoresistive memorycell of the plurality of magnetoresistive memory cells includes anerror; and storing data from the cache into the plurality ofmagnetoresistive memory cells, wherein storing includes storing aninverted state of the data, if the identified data storage state of theat least one magnetoresistive memory cell includes an error based on thedetermination using the error correcting code.
 2. The method of claim 1,further comprising: setting at least one inversion bit to indicate thatthe data stored in the plurality of magnetoresistive memory cells isinverted, if the identified data storage state of the at least onemagnetoresistive memory cell includes an error based on thedetermination using the error correcting code.
 3. The method of claim 1,wherein the first data storage state is a “high” state, and the seconddata storage state is a “low” state.
 4. The method of claim 1, furthercomprising inverting a state of the data if the identified data storagestate of the at least one magnetoresistive memory cell includes an errorbased on the determination using the error correcting code, and whereininverting the state of the data is performed despite a determination ofa majority data storage state for the plurality of magnetoresistivememory cells.
 5. The method of claim 1, wherein the data includes one ormore of data and error correcting code (ECC) words.
 6. The method ofclaim 1, wherein the data includes an error correcting code (ECC) word,and wherein the ECC word includes at least one data bit and at least oneECC bit.
 7. The method of claim 1, further comprising inverting a stateof the data if the identified data storage state of the at least onemagnetoresistive memory cell includes an error based on thedetermination using the error correcting code, and wherein inverting thestate of the data overrides majority detection used to write back aminimum number of bits.
 8. The method of claim 1, wherein eachmagnetoresistive memory cell includes a spin-torque magnetoresistivememory element.
 9. The method of claim 1, wherein identifying the datastorage state of each magnetoresistive memory cell includes performing aself-referenced read of the plurality of magnetoresistive memory cells.10. The method of claim 9, wherein an ACTIVATE commands initiates theperformance of the self-referenced read of the plurality ofmagnetoresistive memory cells.
 11. A method of reading from and writingto a plurality of magnetoresistive memory cells, the method comprising:identifying a data storage state of each magnetoresistive memory cell ofthe plurality of magnetoresistive memory cells, wherein eachmagnetoresistive memory cell is configured to store data in one of afirst data storage state or a second data storage state; storing theidentified data storage state of each magnetoresistive memory cell intoa cache; determining, using an error correcting code, whether theidentified data storage state of at least one magnetoresistive memorycell of the plurality of magnetoresistive memory cells is different thanan expected data storage state for the at least one magnetoresistivememory cell; storing data from the cache into the plurality ofmagnetoresistive memory cells, wherein storing includes storing aninverted state of the data, if the identified data storage state of theat least one magnetoresistive memory cell is different than the expecteddata storage state for the at least one magnetoresistive memory cell;and setting at least one inversion bit to indicate that the data storedin the plurality of magnetoresistive memory cells is in the invertedstate, if the identified data storage state of the at least onemagnetoresistive memory cell is different than the expected data storagestate for the at least one magnetoresistive memory cell.
 12. The methodof claim 11, wherein the first data storage state is a “high” state, andthe second data storage state is a “low” state.
 13. The method of claim11, further comprising inverting a state of the data if the identifieddata storage state of the at least one magnetoresistive memory cell isdifferent than the expected data storage state for the at least onemagnetoresistive memory cell, and wherein inverting the state of thedata is performed despite a determination of a majority data storagestate for the plurality of magnetoresistive memory cells.
 14. The methodof claim 11, wherein the data includes one or more of data and errorcorrecting code (ECC) words.
 15. The method of claim 11, wherein thedata includes an error correcting code (ECC) word, and wherein the ECCword includes at least one data bit and at least one ECC bit.
 16. Themethod of claim 11, further comprising inverting a state of the data ifthe identified data storage state of the at least one magnetoresistivememory cell is different than the expected data storage state for the atleast one magnetoresistive memory cell, and wherein inverting the stateof the data overrides majority detection used to write back a minimumnumber of bits.
 17. The method of claim 11, wherein eachmagnetoresistive memory cell includes a spin-torque magnetoresistivememory element.
 18. A memory device comprising: a plurality ofmagnetoresistive memory cells, wherein each magnetoresistive memory cellis configured to store data in one of a first data storage state or asecond data storage state; and circuitry coupled to the plurality ofmagnetoresistive memory cells and configured to: identify a data storagestate of each magnetoresistive memory cell of the plurality ofmagnetoresistive memory cells; store the identified data storage stateof each magnetoresistive memory cell into a cache; determine a majoritydata storage state for the plurality of magnetoresistive memory cells;determine, using an error correcting code, whether the identified datastorage state of at least one magnetoresistive memory cell of theplurality of magnetoresistive memory cells includes an error; invert astate of data retrieved from or stored in the cache if the identifieddata storage state of at least one magnetoresistive memory cell of theplurality of magnetoresistive memory cells includes an error based onthe determination made using the error correcting code; and store theinverted data state in the plurality of magnetoresistive memory cells.19. The memory device of claim 18, wherein the circuitry is configuredto invert the state of data based on only one of: (i) the determinationof the majority data storage state for the plurality of magnetoresistivememory cells; or (ii) the determination that the identified data storagestate of the at least one magnetoresistive memory cell includes anerror.
 20. The memory device of claim 18, wherein the circuitry isconfigured to invert the state of data despite a determination of amajority data storage state for the plurality of magnetoresistive memorycells.